发明名称 |
ORGANIC LIGHT EMITTING TRANSISTOR AND DISPLAY DEVICE HAVING THE SAME |
摘要 |
An organic light emitting transistor includes a substrate, a first insulating layer on the substrate, an auxiliary gate electrode between the substrate and the first insulating layer, the auxiliary gate electrode corresponding to a first area, a switching gate electrode between the substrate and the first insulating layer, the switching gate electrode corresponding to a second area defined adjacent to at least one side of the first area, the switching gate electrode being insulated from the auxiliary gate electrode, a source electrode on the first insulating layer, the source electrode corresponding to the second area, a semiconductor layer on the first insulating layer, the semiconductor layer corresponding to at least the first area and the semiconductor layer being connected to the source electrode, a drain electrode corresponding to at least the first area, and a light emitting layer interposed between the drain electrode and the semiconductor layer. |
申请公布号 |
US2016155980(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201514700293 |
申请日期 |
2015.04.30 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE Seungchan;KIM Kiseo;PARK Sungkook |
分类号 |
H01L51/52;H01L51/50 |
主分类号 |
H01L51/52 |
代理机构 |
|
代理人 |
|
主权项 |
1. An organic light emitting transistor, comprising:
a substrate; a first insulating layer on the substrate; an auxiliary gate electrode between the substrate and the first insulating layer, the auxiliary gate electrode corresponding to a first area; a switching gate electrode between the substrate and the first insulating layer, the switching gate electrode corresponding to a second area defined adjacent to at least one side of the first area, the switching gate electrode being insulated from the auxiliary gate electrode; a source electrode on the first insulating layer, the source electrode corresponding to the second area; a semiconductor layer on the first insulating layer, the semiconductor layer corresponding to at least the first area and the semiconductor layer being connected to the source electrode; a drain electrode corresponding to at least the first area; and a light emitting layer between the drain electrode and the semiconductor layer. |
地址 |
Yongin-city KR |