发明名称 Method of Growing Germanium Crystals
摘要 In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.
申请公布号 US2016153117(A1) 申请公布日期 2016.06.02
申请号 US201414900426 申请日期 2014.06.20
申请人 SOUTH DAKOTA BOARD OF REGENTS 发明人 Wang Guojian;Mei Dongming
分类号 C30B15/28;C30B29/08;C30B15/10 主分类号 C30B15/28
代理机构 代理人
主权项 1. A method of growing high purity germanium crystals, comprising the steps of: (a) isolating a first crucible containing molten germanium inside a quartz shield; (b) locating said melt container inside a furnace for controlling the temperature of said germanium; (c) passing an inert gas through said melt container; and (d) controlling the diameter of a crystal of germanium drawn from said first crucible at a rate controlled by a load scale that monitors the weight of the crystal.
地址 Pierre SD US