| 发明名称 | Semiconductor manufacturing method and semiconductor device | ||
| 摘要 | A method manufactures a semiconductor device which allows nanocarbon materials, such as high-quality graphene and carbon nanotube to be used. The method of manufacturing the semiconductor device comprises forming on a substrate a wiring structure including wires of nanocarbon material; forming on the wiring structure an element structure including a semiconductor element; and interconnecting the wires of the wiring structure and the semiconductor element of the element structure. | ||
| 申请公布号 | US9355916(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201514668103 | 申请日期 | 2015.03.25 |
| 申请人 | FUJITSU LIMITED | 发明人 | Kondo Daiyu;Sato Shintaro;Yokoyama Naoki;Sato Motonobu |
| 分类号 | H01L29/80;H01L31/11;H01L29/06;H01L21/8238;H01L21/44;H01L27/12;H01L27/092;H01L23/532;H01L21/768;H01L29/786;H01L29/16;H01L29/201;H01L21/285;H01L21/84;H01L23/522;H01L21/8258 | 主分类号 | H01L29/80 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: forming on a substrate a wiring structure including wires of a nanocarbon material; forming on the wiring structure an element structure including semiconductor elements; and interconnecting the wires of the wiring structure and the semiconductor element of the element structure, wherein the wiring structure includes plugs connected to the wires, the plugs of the wiring structure being formed of carbon nanotube, and in the interconnecting, the plugs of the wiring structure and electrodes of the semiconductor element of the element structure are jointed. | ||
| 地址 | Kawasaki JP | ||