METHOD FOR PRODUCING INFRARED RADIATION REFLECTING FILM

摘要

The method for manufacturing an infrared reflecting film comprises, in order: a metal layer forming step of depositing a metal layer on a transparent film substrate; a metal oxide layer forming step of depositing a surface-side metal oxide layer by DC sputtering on the metal layer so as to be in direct contact with the metal layer; and a transparent protective layer forming step of depositing a transparent protective layer on the surface-side metal oxide layer. In the metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is preferably formed by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide. In the surface-side metal oxide layer forming step, an inert gas and an oxygen gas are introduced into a sputtering chamber. The oxygen concentration in the gas introduced to the sputtering chamber is preferably not more than 8 vol %.

主权项

1. A method for manufacturing an infrared reflecting film including a metal layer, a surface-side metal oxide layer, and a transparent protective layer in this order on a transparent film substrate,
the metal layer being a layer composed mainly of silver, and the surface-side metal oxide layer being a composite metal oxide layer containing tin oxide and zinc oxide, the manufacturing method comprising: a metal layer forming step of depositing the metal layer on a transparent film substrate; a surface-side metal oxide layer forming step of depositing the surface-side metal oxide layer by DC sputtering on the metal layer so as to be in direct contact with the metal layer; and a transparent protective layer forming step of forming the transparent protective layer on the surface-side metal oxide layer, in this order, wherein in the surface-side metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is formed by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide, and an inert gas and an oxygen gas are introduced into a sputtering chamber and an oxygen concentration in the gas introduced into the sputtering chamber is 8 vol % or less.