Method for Patterning a Plurality of Features For Fin-Like Field-Effect Transistor (FINFET) Devices

摘要

A method for patterning fins for FinFET devices are disclosed. The method includes forming elongated protrusions on a semiconductor substrate and forming a mask covering a first portion of the elongated protrusions. The method further includes forming a spacer surrounding the mask. The mask and the spacer together cover a second portion of the elongated protrusions. The method further includes removing a portion of the elongated protrusions not covered by the mask and the spacer. In an embodiment, an outer boundary of the spacer and the mask corresponds to an outer boundary of a non-rectangular pattern.

主权项

1. A method, comprising:
forming elongated protrusions on a semiconductor substrate; forming a mask covering a first portion of the elongated protrusions; forming a spacer surrounding the mask, the mask and the spacer together covering a second portion of the elongated protrusions; and removing a portion of the elongated protrusions not covered by the mask and the spacer.