| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device (SGT structure) which has less number of processes in manufacturing and in which upper parts of silicon columns are protected during etching of a gate.SOLUTION: A semiconductor device comprises: a planar silicon layer 107 formed on a silicon substrate 101; columnar silicon layers 104, 105 formed on the planar silicon layer; a gate insulation film 109 formed around the columnar silicon layers; gate electrodes 117a, 117b formed around the gate insulation film; gate wiring 117c connected to the gate electrodes; n-type or p-type first diffusion layers 119, 125 formed on upper parts of the columnar silicon layers; second diffusion layers 120, 126 which are formed on a lower part of the columnar silicon layers and an upper part of the planar silicon layer, and have a conductivity type the same with that of the first diffusion layers; an insulation film side wall 201 formed on upper side walls of the columnar silicon layers and upper parts of the gate electrodes; and another insulation film side wall 202 formed on the insulation film side wall and the gate electrodes and side walls of the gate wiring. |
