发明名称 Method of fabricating a load resistor for an SRAM
摘要 A method of fabricating a load resistor for an SRAM. A substrate has a polysilicon layer formed thereon through a buried contact process. An inter-layer dielectric layer is formed over the substrate and then patterned to form an opening that exposes the polysilicon layer. A poly via is then formed in the opening to serve as a load resistor. The inter-layer dielectric layer is patterned to form a contact window, which is then filled with a conductive layer to form a contact.
申请公布号 US6245627(B1) 申请公布日期 2001.06.12
申请号 US19990251007 申请日期 1999.02.16
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN WEN-JI;HSU SHIH-YING
分类号 H01L21/02;H01L21/8244;(IPC1-7):H01L21/824 主分类号 H01L21/02
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