发明名称 |
Method of fabricating a load resistor for an SRAM |
摘要 |
A method of fabricating a load resistor for an SRAM. A substrate has a polysilicon layer formed thereon through a buried contact process. An inter-layer dielectric layer is formed over the substrate and then patterned to form an opening that exposes the polysilicon layer. A poly via is then formed in the opening to serve as a load resistor. The inter-layer dielectric layer is patterned to form a contact window, which is then filled with a conductive layer to form a contact.
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申请公布号 |
US6245627(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US19990251007 |
申请日期 |
1999.02.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN WEN-JI;HSU SHIH-YING |
分类号 |
H01L21/02;H01L21/8244;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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