METHODS OF FORMING SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE

摘要

Methods of forming a semiconductor device are provided. An active region is formed on a substrate. A temporary gate crossing the active region and a capping pattern covering the temporary gate are formed. Spacers are formed on sidewalls of the temporary gate. A growth-blocking layer is locally formed in an upper edge of the temporary gate. A source/drain region is formed on the active region adjacent to the temporary gate. The capping pattern, the first growth-blocking layer, and the temporary gate are removed to expose the active region. A gate electrode is formed on the exposed active region.

主权项

1. A method of forming a semiconductor device, comprising:
forming an active region on a substrate; forming a temporary gate crossing the active region and a capping pattern on the temporary gate; forming spacers on sidewalls of the temporary gate; forming a first growth-blocking layer selectively in an upper edge of the temporary gate; forming a source/drain region on the active region adjacent to the temporary gate; removing the capping pattern, the first growth-blocking layer, and the temporary gate to expose the active region; and forming a gate electrode on the exposed active region.