LIGHT-EMITTING DEVICE

摘要

A light-emitting device includes light-emitting units and an electrical connection layer. Each light-emitting unit includes a light-emitting stacking layer, a first electrode layer, an insulation layer, and a second electrode layer. The light-emitting stacking layer includes first and second-type doped semiconductor layers, an active layer, and a first inner opening passing through the second-type doped semiconductor layer and the active layer. The second electrode layer is close to and is electrically connected to the second-type doped semiconductor layer. The insulation layer is disposed on a sidewall of the first inner opening and forms a second inner opening. The first electrode layer is disposed in the second inner opening and electrically connected to the first-type doped semiconductor layer. The electrical connection layer is electrically connected to the first electrode layer of one of two adjacent light-emitting units and the second electrode layer of the other adjacent light-emitting unit.

主权项

1. A light-emitting device comprising a plurality of light-emitting units and at least one electrical connection layer arranged between the light-emitting units, each of the light-emitting units comprising:
a light-emitting stacking layer comprising:
a first-type doped semiconductor layer;a second-type doped semiconductor layer;an active layer arranged between the first-type doped semiconductor layer and the second-type doped semiconductor layer; andat least one first inner opening passing through the second-type doped semiconductor layer and the active layer; a first electrode layer; an insulation layer; and a second electrode layer arranged at least on a side of the light-emitting stacking layer close to the second-type doped semiconductor layer and electrically connected to the second-type doped semiconductor layer, the insulation layer being arranged at least on a sidewall of the at least one first inner opening and forming at least one second inner opening, the first electrode layer being arranged at least in the at least one second inner opening and electrically connected to the first-type doped semiconductor layer, wherein the at least one electrical connection layer is electrically connected to the first electrode layer of one of two light-emitting units adjacent to the at least one electrical connection layer and electrically connected to the second electrode layer of the other one of the two light-emitting units adjacent to the at least one electrical connection layer.