发明名称 |
BULK ACOUSTIC RESONATOR DEVICE INCLUDING TEMPERATURE COMPENSATION STRUCTURE COMPRISING LOW ACOUSTIC IMPEDANCE LAYER |
摘要 |
An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate. |
申请公布号 |
US2016118957(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201414521406 |
申请日期 |
2014.10.22 |
申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd . |
发明人 |
Burak Dariusz;Zou Qiang;Tsuzuki Genichi |
分类号 |
H03H9/54;H01L41/047 |
主分类号 |
H03H9/54 |
代理机构 |
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代理人 |
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主权项 |
1. A bulk acoustic wave (BAW) resonator, comprising:
a substrate comprising an acoustic reflector; a first electrode disposed over the substrate, the first electrode having a first acoustic impedance; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer, the second electrode having a second acoustic impedance; and a temperature compensation structure disposed beneath the first electrode and above the substrate, the temperature compensation structure comprising: a first layer having a positive temperature coefficient; and a second layer having a third acoustic impedance that is lower than the first and the second acoustic impedances. |
地址 |
Singapore SG |