发明名称 BULK ACOUSTIC RESONATOR DEVICE INCLUDING TEMPERATURE COMPENSATION STRUCTURE COMPRISING LOW ACOUSTIC IMPEDANCE LAYER
摘要 An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate.
申请公布号 US2016118957(A1) 申请公布日期 2016.04.28
申请号 US201414521406 申请日期 2014.10.22
申请人 Avago Technologies General IP (Singapore) Pte. Ltd . 发明人 Burak Dariusz;Zou Qiang;Tsuzuki Genichi
分类号 H03H9/54;H01L41/047 主分类号 H03H9/54
代理机构 代理人
主权项 1. A bulk acoustic wave (BAW) resonator, comprising: a substrate comprising an acoustic reflector; a first electrode disposed over the substrate, the first electrode having a first acoustic impedance; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer, the second electrode having a second acoustic impedance; and a temperature compensation structure disposed beneath the first electrode and above the substrate, the temperature compensation structure comprising: a first layer having a positive temperature coefficient; and a second layer having a third acoustic impedance that is lower than the first and the second acoustic impedances.
地址 Singapore SG