| 摘要 |
There is provided a high power semiconductor device with an edge termination technique which requires less wafer area and is less sensitive to doping level and positional variations. The device comprises a semiconductor wafer (W), the wafer (W) having an active region (AR) and a termination region (TR) laterally surrounding the active region (AR), wherein a plurality of junction termination extension rings (20) and a plurality of guard rings (25) are formed in the termination region (TR), wherein the number of guard rings is less than the number of termination extension rings, each one of the junction termination extension rings (20) and of the guard rings (25) is a ring-shaped semiconductor region of the first conductivity type, which is laterally surrounding the active region (AR), the junction termination extension rings (20) are spaced from each other in the lateral direction, the guard rings (25) are spaced from each other in the lateral direction, the innermost guard ring (25) laterally surrounds the innermost junction termination extension ring (20), at least two junction termination extension rings (20) laterally surround the outermost guard ring (25), and the guard rings (25) have a doping concentration which is 5·10 18 cm -3 or higher and the junction termination extension rings (20) have a doping concentration which is 8·10 17 cm -3 or lower. |
