THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which achieves high bias stress stability and low density of states due to oxygen defect; and provide a manufacturing method of the thin film transistor.SOLUTION: In a thin film transistor having a laminate composed of a gate insulation layer 4, a metal oxide semiconductor layer 7 containing indium, a buffer layer 8 and a protection layer 9 which is formed by coating a protection layer formation composition which contains polymer including a hydroxyl group in a repeating unit and contains a solvent, the buffer layer 8 is formed to completely cover the metal oxide semiconductor layer 7 and subsequently the protection layer 9 is formed.SELECTED DRAWING: Figure 1