| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging element capable of suppressing the transfer remaining of a signal charge and a solid-state imaging apparatus.SOLUTION: The imaging element includes a storage electrode, a second insulation layer, a semiconductor layer, a collection electrode, a photoelectric conversion layer, and an upper electrode. The storage electrode is formed on a first insulation layer. The second insulation layer is formed on the storage layer. The semiconductor layer is formed so as to cover the storage electrode and the second insulation layer. The collection electrode is formed so as to be in contact with the semiconductor layer and is formed so as to be away from the storage electrode. The photoelectric conversion layer is formed on the semiconductor layer. The upper electrode is formed on the photoelectric conversion layer.SELECTED DRAWING: Figure 3 |
