| 发明名称 |
FIN-SHAPED STRUCTURE AND METHOD THEREOF |
| 摘要 |
A method of forming a fin-shaped structure includes the following steps. A substrate having at least a fin structure thereon is provided. A liner is formed on sidewalls of the fin structure. An oxide layer is formed between the fin structure and the substrate. The fin structure is removed until a bottom layer of the fin structure is reserved, to form a recess between the liner. A buffer epitaxial layer and an epitaxial layer are sequentially formed in the recess. A top part of the liner is removed until sidewalls of the epitaxial layer are exposed. Moreover, a fin-shaped structure formed by said method is also provided. |
| 申请公布号 |
US2016111448(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414519146 |
申请日期 |
2014.10.21 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hsu Chih-Kai;Hung Yu-Hsiang;Fu Ssu-I;Jenq Jyh-Shyang |
| 分类号 |
H01L27/12;H01L29/66;H01L21/84;H01L21/762;H01L21/02;H01L29/78;H01L29/06 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a fin-shaped structure, comprising:
providing a substrate having at least a fin structure thereon; forming a liner on sidewalls of the fin structure; forming an oxide layer between the fin structure and the substrate; removing the fin structure until a bottom layer of the fin structure is reserved, to form a recess between the liner; sequentially forming a buffer epitaxial layer and an epitaxial layer in the recess; and removing a top part of the liner until sidewalls of the epitaxial layer are exposed. |
| 地址 |
Hsin-Chu City TW |
