PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus or processing method that has improved yield of processing.SOLUTION: There is provided a plasma processing apparatus or processing method, the plasma processing apparatus comprising: a stage which is arranged in a processing chamber where plasma is generated and on the upper surface of which a wafer to be processed is placed; and an electrode which is arranged on the stage and supplied with electric power for electrostatically attracting and holding the wafer on the upper surface of the stage, and the plasma processing apparatus processing a plurality of wafers successively one by one. Each of the plasma processing apparatus and the plasma processing method has a plurality of processing steps of performing processing using the plasma under different conditions and a plurality of periods in which the generation of the plasma is stopped between those processing steps, and performs a step of forming a coating on an inner wall of the processing chamber before the processing on an arbitrary wafer starts, a voltage applied to the electrode being varied in each period in which the generation of the plasma is stopped according to balance of respective polarities of electrostatically charged particles suspended in the processing chamber.SELECTED DRAWING: Figure 2