Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-k materials

摘要

The present disclosure provides integrated circuit elements and MIM/MIS capacitors having high capacitance and methods of forming according integrated circuit elements and integrated MIM/MIS capacitors and methods of controlling an integrated circuit element and an integrated MIM/MIS capacitor. In various aspects, a substrate is provided and a dielectric layer or insulating layer is formed over the substrate. Furthermore, an electrode layer is disposed over the dielectric layer or insulating layer. Herein, the dielectric layer or insulating layer is in an antiferroelectric phase. In various illustrative embodiments, the integrated circuit element may implement a MOSFET structure or a capacitor structure.

主权项

1. An integrated circuit element, comprising:
a substrate; a dielectric layer formed over a surface of said substrate; a capping layer formed between said substrate and said dielectric layer; and an electrode layer formed over said dielectric layer, wherein said dielectric layer is at least partially in an antiferroelectric phase.