发明名称 Image sensor
摘要 An image sensor includes a first sub-gate in a recessed region in a substrate; a second sub-gate on the first sub-gate in contact with an upper surface of the substrate; and an element isolation region in the substrate spaced apart from the first sub-gate. A lower surface of the second sub-gate is wider than an upper surface of the first sub-gate, and a portion of the element isolation region is spaced apart from the second sub-gate by a first distance in a first direction.
申请公布号 US9318521(B2) 申请公布日期 2016.04.19
申请号 US201414222915 申请日期 2014.03.24
申请人 Samsung Electronics Co., Ltd. 发明人 Ihara Hisanori
分类号 H01L27/148;H01L27/146 主分类号 H01L27/148
代理机构 Onello & Mello, LLP 代理人 Onello & Mello, LLP
主权项 1. An image sensor comprising: a first sub-gate in a recessed region in a substrate; a second sub-gate on the first sub-gate in contact with an upper surface of the substrate; an element isolation region in the substrate spaced apart from the first sub-gate; and a floating diffusion region positioned between the first sub-gate and the element isolation region in a second direction that lies in a plane that is parallel to the plane of the substrate on a first side of the second sub-gate, wherein a lower surface of the second sub-gate is wider than an upper surface of the first sub-gate, and wherein a portion of the element isolation region is spaced apart from the second sub-gate on a second side of the second sub-gate by a first distance in a first direction that lies in a plane that is parallel to the plane of the substrate and is perpendicular to the second direction in a plan view, wherein the second side of the second sub-gate is different than the first side of the second sub-gate and the second side of the second sub-gate is perpendicular to the first side of the second sub-gate, and wherein the floating diffusion region is spaced apart from the first sub-gate on the first side of the second sub-gate in the second direction different than the first direction and, in the plan view, a width of the portion of the element isolation region extending in the second direction is between a width of the second sub-gate in the second direction and a width of the first sub-gate in the second direction.
地址 KR