发明名称 |
Power gated and voltage biased memory circuit for reducing power |
摘要 |
A circuit system includes: a plurality of memory blocks; a power supply circuit configured to supply operating power and substrate power to the plurality of memory blocks; a plurality of first power supply switches configured to control whether or not the operating power is supplied from the power supply circuit to the plurality of memory blocks; and a control circuit configured to control the power supply circuit and the plurality of first power supply switches, wherein the control circuit changes a voltage of the operating power to be supplied by the power supply circuit and a voltage of the substrate power to be supplied by the power supply circuit, based on a state of whether the first power supply switches are in a supplying state or a blocking state. |
申请公布号 |
US9310878(B2) |
申请公布日期 |
2016.04.12 |
申请号 |
US201313939344 |
申请日期 |
2013.07.11 |
申请人 |
FUJITSU LIMITED |
发明人 |
Watanabe Yasuhiro;Kawakami Kentaro |
分类号 |
G06F1/32 |
主分类号 |
G06F1/32 |
代理机构 |
Staas & Halsey LLP |
代理人 |
Staas & Halsey LLP |
主权项 |
1. A circuit system comprising:
a plurality of memory blocks; a power supply circuit configured to supply operating power and substrate power to the plurality of memory blocks; a plurality of first power supply switches configured to control whether or not the operating power is supplied from the power supply circuit to the plurality of memory blocks; and a control circuit configured to control the power supply circuit and the plurality of first power supply switches, wherein the control circuit changes a voltage of the operating power to be supplied by the power supply circuit and a voltage of the substrate power to be supplied by the power supply circuit, based on a state of whether each of the plurality of first power supply switches is in a supplying state or a blocking state. |
地址 |
Kawasaki JP |