发明名称 Power gated and voltage biased memory circuit for reducing power
摘要 A circuit system includes: a plurality of memory blocks; a power supply circuit configured to supply operating power and substrate power to the plurality of memory blocks; a plurality of first power supply switches configured to control whether or not the operating power is supplied from the power supply circuit to the plurality of memory blocks; and a control circuit configured to control the power supply circuit and the plurality of first power supply switches, wherein the control circuit changes a voltage of the operating power to be supplied by the power supply circuit and a voltage of the substrate power to be supplied by the power supply circuit, based on a state of whether the first power supply switches are in a supplying state or a blocking state.
申请公布号 US9310878(B2) 申请公布日期 2016.04.12
申请号 US201313939344 申请日期 2013.07.11
申请人 FUJITSU LIMITED 发明人 Watanabe Yasuhiro;Kawakami Kentaro
分类号 G06F1/32 主分类号 G06F1/32
代理机构 Staas & Halsey LLP 代理人 Staas & Halsey LLP
主权项 1. A circuit system comprising: a plurality of memory blocks; a power supply circuit configured to supply operating power and substrate power to the plurality of memory blocks; a plurality of first power supply switches configured to control whether or not the operating power is supplied from the power supply circuit to the plurality of memory blocks; and a control circuit configured to control the power supply circuit and the plurality of first power supply switches, wherein the control circuit changes a voltage of the operating power to be supplied by the power supply circuit and a voltage of the substrate power to be supplied by the power supply circuit, based on a state of whether each of the plurality of first power supply switches is in a supplying state or a blocking state.
地址 Kawasaki JP