| 主权项 |
1. A semiconductor device comprising:
a first semiconductor layer formed with i-GaN on a substrate; a second semiconductor layer formed on the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer have a common opening, wherein the opening forms
a recess in the first semiconductor layer, the recess having a depth that is smaller than a thickness of the first semiconductor layer, anda through-hole through the second semiconductor layer; a fifth semiconductor layer that fills the recess in the first semiconductor layer, the fifth semiconductor layer formed with GaN different from i-GaN; a third semiconductor layer formed on the fifth semiconductor layer inside the through-hole in the second semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer in an area immediately above the through-hole in the second semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer, wherein the fourth semiconductor layer is formed with a p-type semiconductor material, and the second semiconductor layer and the third semiconductor layer are formed with AlGaN, and the third semiconductor layer has a lower composition ratio of Al than that of the second semiconductor layer. |
