SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED BY THE SAME

摘要

In the present invention, disclosed are a transparent electrode of a semiconductor light emitting device, a method for manufacturing a semiconductor light emitting device, and a semiconductor light emitting device manufactured thereby. The method for manufacturing a semiconductor light emitting device according to the present invention comprises the steps of: (a) preparing a second substrate provided with a first substrate or a conductive semiconductor layer; and (b) providing a transparent electrode including a metal oxide semiconductor layer and a graphene layer provided in a patterned form on the metal oxide semiconductor layer, on the upper side of the first substrate or the conductive semiconductor layer. According to the present invention, it is possible to improve the electrical characteristics of the transparent electrode and the light emitting device through improvement of an electrode structure such as providing the graphene layer in a multiple-strip form or a multiple-grid form in the metal oxide semiconductor layer. Particularly, even when a heat treatment process is omitted, it is possible to have sufficient electrical characteristics.