| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that suppresses a probability of malfunction and is reducible in power consumption. <P>SOLUTION: The nonvolatile semiconductor storage device includes a first wiring; a second wiring that exists at positions opposed to the first wiring; and a variable resistance layer that exists between the first wiring and the second wiring, and that can change reversibly between a first state having a first resistivity and a second state having a second resistivity that is higher than the first resistivity, by a voltage applied via the first wiring and the second wiring, or by a current supplied via the first wiring and the second wiring. The variable resistance layer has a compound of carbon and silicon as the main ingredient thereof, and also contains hydrogen. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
