| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device according to an embodiment includes a SiC layer, a gate electrode, a gate insulating film provided between the SiC layer and the gate electrode, a first region provided between the SiC layer and the gate insulating film, and a second region provided in the SiC layer. The first region contains at least one element selected from the group consisting of N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), Sc (scandium), Y (yttrium), La (lanthanum), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), H (hydrogen), D (deuterium), and F (fluorine). The second region provided adjacent to the first region, and the second region has a higher oxygen concentration than a concentration of the at least one element. |
| 申请公布号 |
US2016087045(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514813619 |
申请日期 |
2015.07.30 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SHIMIZU Tatsuo |
| 分类号 |
H01L29/16;H01L29/51;H01L21/324;H01L21/28;H01L21/321 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a SiC layer; a gate electrode; a gate insulating film provided between the SiC layer and the gate electrode; a first region provided between the SiC layer and the gate insulating film, the first region containing at least one element selected from the group consisting of N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), Sc (scandium), Y (yttrium), La (lanthanum), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), H (hydrogen), D (deuterium), and F (fluorine); and a second region provided in the SiC layer, the second region provided adjacent to the first region, the second region having a higher oxygen concentration than a concentration of the at least one element. |
| 地址 |
Minato-ku JP |
