METHOD FOR DEPOSITING INSULATION FILM

摘要

According to an embodiment of the present invention, a method for depositing an insulation film comprises: an insulation film deposition step for performing an adsorption step for adsorbing silicon onto a substrate by injecting a silicon precursor into a chamber in which the substrate is loaded, a first purge step for removing an un-reacted silicon precursor and a by-product within the chamber, a reaction step for forming the adsorbed silicon into an insulation film containing silicon by supplying a first reaction source into the chamber, and a second purge step for removing an un-reacted first reaction source and a by-product within the chamber; and a densification step for densifying the insulation film containing the silicon by forming a plasma atmosphere within the chamber, wherein the plasma atmosphere is formed by injecting a second reaction source containing H2 in the densification step in order to improve a step coverage of the insulation film containing the silicon.