| 发明名称 |
LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL |
| 摘要 |
Transistors and methods for fabricating the same include annealing channel portions of one or more semiconductor fins that are uncovered by a protective layer in a gaseous environment to reduce fin width, to produce a fin profile that is widest at the bottom and tapers toward the top, and to round corners of the one or more semiconductor fins. |
| 申请公布号 |
US2016086820(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514949430 |
申请日期 |
2015.11.23 |
| 申请人 |
Renesas Electronics Corporation ;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BASKER VEERARAGHAVAN S.;MOCHIZUKI SHOGO;YAMASHITA TENKO;YEH CHUN-CHEN |
| 分类号 |
H01L21/324;H01L29/66 |
主分类号 |
H01L21/324 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a transistor, comprising:
annealing channel portions of one or more semiconductor fins that are uncovered by a protective layer in a gaseous environment to reduce fin width, to produce a fin profile that is widest at the bottom and tapers toward the top, and to round corners of the one or more semiconductor fins. |
| 地址 |
Kanagawa JP |
