| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce crystal defect caused by polycrystalline that occurs at the time of laser annealing with an impurity layer on a rear surface side. <P>SOLUTION: An FS type IGBT element is manufactured by the steps including: a step (step S10) in which an MOS gate structure and an emitter electrode are formed on a main surface side of an Si single crystal substrate, a step (step S20) for grinding the rear surface side, a step (step S30) for injecting n-type impurity and p-type impurity in this order from the rear surface side, a laser anneal step (step S40) for activating the impurity layer by radiating laser, a step (step S50) for forming a collector electrode, and a step (step S70) for measuring a degree of multi-crystal which is a rate of polycrystalline component contained in the single crystal by performing an X-ray diffraction test on the rear surface. Here, a laser radiation condition in the laser anneal step is determined so that the degree of multi-crystal measured in a polycrystal measurement step comes to be 200 ppm or less, with 100 ppm or less being more preferred. <P>COPYRIGHT: (C)2013,JPO&INPIT |
