发明名称 Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor
摘要 A system comprising a sensor with a free layer that exhibits an anomalous Hall effect is disclosed. Further, the sensor has a magnetic underlayer below the free layer in a track direction for biasing a magnetic orientation of the free layer in a first magnetic orientation, and a magnetic overlayer above the free layer in the track direction for biasing the magnetic orientation of the free layer in the first magnetic orientation. Still further, the sensor has a lower nonmagnetic spacer layer between the magnetic underlayer and the free layer, and an upper nonmagnetic spacer layer between the magnetic overlayer and the free layer.
申请公布号 US9293160(B1) 申请公布日期 2016.03.22
申请号 US201514616621 申请日期 2015.02.06
申请人 HGST Netherlands B.V. 发明人 Mihajlovic Goran;Smith Neil
分类号 G11B5/37 主分类号 G11B5/37
代理机构 Zilka-Kotab, PC 代理人 Zilka-Kotab, PC
主权项 1. A system, comprising: a sensor having: a first free layer;a second free layer above the first free layer in a track direction, the free layers exhibiting an anomalous Hall effect;a nonmagnetic spacer layer between the first free layer and the second free layer;a magnetic underlayer below the first free layer in the track direction for biasing a magnetic orientation of the first free layer in a first magnetic orientation;a magnetic overlayer above the second free layer in the track direction for biasing a magnetic orientation of the second free layer in a second magnetic orientation antiparallel to the first magnetic orientation;a lower nonmagnetic spacer layer between the magnetic underlayer and the first free layer; andan upper nonmagnetic spacer layer between the magnetic overlayer and the second free layer; a first set of electrodes configured to pass a current through the first free layer and the second free layer in a first direction; and at least one second electrode configured to allow measurement of a Hall voltage of the first free layer and the second free layer in a second direction orthogonal to the first direction; wherein a magnetic orientation of the magnetic overlayer is oriented antiparallel to the magnetic orientation of the second free layer, and a magnetic orientation of the magnetic underlayer is oriented antiparallel to the magnetic orientation of the first free layer; wherein the sensor is configured such that the Hall voltage is substantially 0 volts when the sensor is at a quiescent state.
地址 Amsterdam NL