发明名称 |
Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor |
摘要 |
A system comprising a sensor with a free layer that exhibits an anomalous Hall effect is disclosed. Further, the sensor has a magnetic underlayer below the free layer in a track direction for biasing a magnetic orientation of the free layer in a first magnetic orientation, and a magnetic overlayer above the free layer in the track direction for biasing the magnetic orientation of the free layer in the first magnetic orientation. Still further, the sensor has a lower nonmagnetic spacer layer between the magnetic underlayer and the free layer, and an upper nonmagnetic spacer layer between the magnetic overlayer and the free layer. |
申请公布号 |
US9293160(B1) |
申请公布日期 |
2016.03.22 |
申请号 |
US201514616621 |
申请日期 |
2015.02.06 |
申请人 |
HGST Netherlands B.V. |
发明人 |
Mihajlovic Goran;Smith Neil |
分类号 |
G11B5/37 |
主分类号 |
G11B5/37 |
代理机构 |
Zilka-Kotab, PC |
代理人 |
Zilka-Kotab, PC |
主权项 |
1. A system, comprising:
a sensor having:
a first free layer;a second free layer above the first free layer in a track direction, the free layers exhibiting an anomalous Hall effect;a nonmagnetic spacer layer between the first free layer and the second free layer;a magnetic underlayer below the first free layer in the track direction for biasing a magnetic orientation of the first free layer in a first magnetic orientation;a magnetic overlayer above the second free layer in the track direction for biasing a magnetic orientation of the second free layer in a second magnetic orientation antiparallel to the first magnetic orientation;a lower nonmagnetic spacer layer between the magnetic underlayer and the first free layer; andan upper nonmagnetic spacer layer between the magnetic overlayer and the second free layer; a first set of electrodes configured to pass a current through the first free layer and the second free layer in a first direction; and at least one second electrode configured to allow measurement of a Hall voltage of the first free layer and the second free layer in a second direction orthogonal to the first direction; wherein a magnetic orientation of the magnetic overlayer is oriented antiparallel to the magnetic orientation of the second free layer, and a magnetic orientation of the magnetic underlayer is oriented antiparallel to the magnetic orientation of the first free layer; wherein the sensor is configured such that the Hall voltage is substantially 0 volts when the sensor is at a quiescent state. |
地址 |
Amsterdam NL |