| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory and a manufacturing method thereof capable of reducing the number of processes.SOLUTION: The semiconductor memory includes: a substrate 10 having a principal plane; a laminate 100; and plural columns CL. The laminate 100 includes plural electrode layers WL which are formed over the substrate 10 being inclined with respect to the principal plane and plural insulation layers 40 which are formed between the electrode layers WL being inclined with respect to the principal plane. Each of the columns CL has a channel body 20 which extends penetrating the laminate 100 toward the substrate 10 being inclined with respect to the principal plane, and a memory film 30 formed between the channel body 20 and the electrode layer WL.SELECTED DRAWING: Figure 1 |
