Method and structure for determining thermal cycle reliability

摘要

A device and method for evaluating reliability of a semiconductor chip structure built by a manufacturing process includes a test structure built in accordance with a manufacturing process. The test structure is thermal cycled and the yield of the test structure is measured. The reliability of the semiconductor chip structure built by the manufacturing process is evaluated based on the yield performance before the thermal cycling.

主权项

1. A test structure used to determine reliability performance, comprising:
a patterned metallization structure having a plurality of interfaces in a semiconductor structure, which form stress risers, the metallization structure including at least one of:
a via chain formed through layers of patterned metallization in the semiconductor structure such that a plurality of widths of vias are sued to adjust strain in different layers; anda dummy structure formed to provide a via density in an area of the semiconductor structure to adjust strain in adjacent structures of the test structure; and a dielectric material surrounding the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exists such that failures occur under given stress conditions to provide a yield indicative of reliability for a manufacturing design.