| 主权项 |
1. A semiconductor system, comprising:
a Schottky diode having an integrated PN diode as a clamping element, which is suitable as a Zener diode having a breakdown voltage of approximately 20 V for use in a motor vehicle generator system, a breakdown voltage of the PN diode being much lower than a breakdown voltage of the Schottky diode, wherein the Schottky diode includes an n-epitaxial layer applied to an n+-substrate of a chip as a cathode zone of the Schottky diode, n-wells in the n-epitaxial layer are provided and are used as a cathode zone of the PN diode, and corresponding p+-wells diffused into the n-epitaxial layer and into the n-wells are provided and are used as an anode zone of the PN diode, wherein the n-wells are implemented in the form of filled trenches, and wherein additional n-wells, having a higher doping concentration in comparison to the n-wells, are located between the n-wells and the n+-substrate. |
