| 发明名称 |
SILICON GERMANIUM READ PORT FOR A STATIC RANDOM ACCESS MEMORY REGISTER FILE |
| 摘要 |
A static random access memory (SRAM) circuit includes a write port and a read port coupled to the write port. The read port includes a read bit line and a first p-type metal oxide semiconductor (PMOS) transistor having a silicon germanium (SiGe) channel. The read port also includes a second PMOS transistor having a second SiGe channel, where the second PMOS transistor is coupled to the first PMOS transistor. |
| 申请公布号 |
US2016064068(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414473974 |
申请日期 |
2014.08.29 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Mojumder Niladri;Song Stanley Seungchul;Wang Zhongze;Yeap Choh Fei |
| 分类号 |
G11C11/419 |
主分类号 |
G11C11/419 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A static random access memory (SRAM) circuit comprising:
a write port; and a read port coupled to the write port, the read port comprising:
a first p-type metal oxide semiconductor (PMOS) transistor having a silicon germanium (SiGe) channel; anda second PMOS transistor having a SiGe channel, wherein the second PMOS transistor is coupled to the first PMOS transistor. |
| 地址 |
San Diego CA US |
