CAPACITOR HAVING A GRAPHENE STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR AND METHOD OF FORMING THE SAME

摘要

The present invention relates to a capacitor having a graphene structure, a semiconductor device including the capacitor, and a forming method thereof. According to the present invention, the capacitor includes a first graphene structure having a plurality of first graphene layers. The capacitor further includes a dielectric layer on the first graphene structure. The capacitor further includes a second graphene structure on the dielectric layer, wherein the second graphene structure has a plurality of second graphene layers. According to the present invention, the use of graphene as electrodes in the capacitor can help increase the charge carrier storage capacity per unit area, in comparison with other electrode materials.