发明名称 Method for manufacturing light emitting device and light emitting device
摘要 A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.
申请公布号 US9276180(B2) 申请公布日期 2016.03.01
申请号 US201314074084 申请日期 2013.11.07
申请人 NICHIA CORPORATION 发明人 Ishida Masashi;Sato Daisuke;Kitajima Tadayuki
分类号 H01L33/54;H01L33/60;H01L33/48;H01L33/52;H01L23/28;H01L23/31;H01L25/075;H01L23/00;H01L33/50 主分类号 H01L33/54
代理机构 Squire Patton Boggs (US) LLP 代理人 Squire Patton Boggs (US) LLP
主权项 1. A method for manufacturing a light emitting device, the light emitting device comprising a light emitting element disposed over a substrate, and a reflective resin disposed along a side surface of the light emitting element, the method comprising the steps of: disposing a plurality of light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element other than the light emitting element in between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements disposed in the matrix; after disposing phosphor layers over the respective upper surfaces of the light emitting elements, disposing a reflective resin along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers to cover the semiconductor elements; and simultaneously cutting the reflective resin and the substrate disposed in between the adjacent light emitting elements in one of the column and row directions and between the light emitting element and the semiconductor element adjacent thereto in the other direction of the column and row directions so as to include at least one light emitting element and one semiconductor element, wherein, in the step of cutting, cutting is performed in a vertical direction including the light emitting element and the semiconductor element such that a corner formed by a side surface of the reflective resin on the semiconductor element side and an upper surface of the reflective resin forms an acute angle in a cross-sectional view.
地址 Anan-Shi JP