发明名称 半導体レーザ装置組立体
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser device assembly which can eliminate light intensity fluctuation in duration of emitted pulse laser beams in a mode-locked semiconductor laser element in which a spectrum of an optical output shows long-wave shift by self phase modulation.SOLUTION: A semiconductor laser device assembly comprises: a mode-locked semiconductor laser element 10 in which a spectrum of an optical output shows long-wave shift by self phase modulation; an external resonator 80; and a wavelength selective element 82. A long-wave component of pulse laser beams emitted from the mode-locked semiconductor laser element 10 via the external resonator 80 is extracted by the wavelength selective element 82 and output to the outside. In a spectrum after long-wave shift, in the case where an envelope of the spectrum drops to a half band width of a peak in assuming that a wavelength after the shift is the peak, a spectral band width provided by the half band width of the envelope is set as a wavelength to be output to the outside.
申请公布号 JP5868480(B2) 申请公布日期 2016.02.24
申请号 JP20140251500 申请日期 2014.12.12
申请人 ソニー株式会社;国立大学法人東北大学 发明人 横山 弘之;河野 俊介;倉本 大
分类号 H01S5/065;H01S5/14 主分类号 H01S5/065
代理机构 代理人
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