| 发明名称 | Reaction tube, substrate processing apparatus and method of manufacturing semiconductor device | ||
| 摘要 | Provided are a reaction tube, a substrate processing apparatus, and a method of manufacturing a semiconductor device capable of suppressing a non-uniform distribution of a gas in a top region to improve the flow of the gas and film uniformity within and between substrate surfaces. The reaction tube has a cylindrical shape, accommodates a plurality of substrates stacked therein, and includes a cylindrical portion and a ceiling portion covering an upper end portion of the cylindrical portion, the ceiling portion having a substantially flat top inner surface. A thickness of a sidewall of the ceiling portion is greater than that of a sidewall of the cylindrical portion. | ||
| 申请公布号 | US9263269(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201314025710 | 申请日期 | 2013.09.12 |
| 申请人 | Hitachi Kokusai Electric Inc. | 发明人 | Okada Satoshi;Takagi Kosuke;Kaga Yukinao |
| 分类号 | H01L21/00;H01L21/263;C23C16/34;C23C16/40;C23C16/455 | 主分类号 | H01L21/00 |
| 代理机构 | Edell, Shapiro & Finnan LLC | 代理人 | Edell, Shapiro & Finnan LLC |
| 主权项 | 1. A reaction tube to accommodate a plurality of substrates stacked therein, the reaction tube comprising: a hollow cylindrical portion; and a ceiling portion covering an upper end portion of the cylindrical portion to form a cylindrical process chamber, the ceiling portion having a substantially flat top inner surface that terminates the cylindrical process chamber and an external diameter that is greater than an outer diameter of the cylindrical portion, wherein a thickness of a sidewall of the ceiling portion is greater than that of a sidewall of the cylindrical portion and wherein the process chamber is terminated by the flat top inner surface of the ceiling portion where the outer diameter of the ceiling portion is greater than the outer diameter of the cylindrical portion. | ||
| 地址 | Tokyo JP | ||