Single photon avalanche diode with second semiconductor layer burried in epitaxial layer

摘要

A first semiconductor layer serves as a first implanted layer of a first conductivity type. A second semiconductor layer of a second conductivity type is provided under the first semiconductor layer. The second conductivity type is opposite to the first conductivity type. The second semiconductor layer is buried in an epitaxial layer grown above a substrate. The second semiconductor layer becomes fully depleted when an appropriate bias voltage is applied to the device.

主权项

1. A single photon avalanche diode (SPAD), comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type implanted under the first semiconductor layer, in which the second conductivity type is opposite to the first conductivity type; a third semiconductor layer of the second conductivity type, which surrounds the first semiconductor layer; an epitaxial layer of the second conductivity type, which is formed on a substrate, a first contact connected to the first semiconductor layer via a conducting layer of the first conductivity type; and a second contact connected to the second semiconductor layer via a conducting layer of the second conductivity type, wherein the second semiconductor layer is buried in the epitaxial layer and the second semiconductor layer is fully depleted when a bias voltage is applied between the first contact and the second contact.