| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that it is difficult to provide a trench gate IGBT having a low on-resistance and a high breakdown voltage, without complicating the structure.SOLUTION: In a trench gate IGBT, width of the trench bottom is widened to 3-15 μm. By this structure, holes can be accumulated in a drift layer under a base region, and thereby conductivity modulation occurs, and the on-resistance can be reduced without arranging a carrier accumulation layer. Furthermore, when the thickness of the drift layer under a trench is set to 40-140 μm, and the specific resistance of the drift layer is set to 10-150 &OHgr;cm, an IGBT having a high breakdown voltage and a low on-resistance can be formed.SELECTED DRAWING: Figure 1 |
