发明名称 Methods for Manufacturing RFID Tags and Structures Formed Therefrom
摘要 Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g., improved electrical characteristics) as compared to tags containing organic electronic devices.
申请公布号 US2016035762(A1) 申请公布日期 2016.02.04
申请号 US201514847999 申请日期 2015.09.08
申请人 CLEEVES James Montague;MACKENZIE J. Devin;KAMATH Arvind 发明人 CLEEVES James Montague;MACKENZIE J. Devin;KAMATH Arvind
分类号 H01L27/12;H01L29/872;H01L49/02;G06K19/073;H01L23/13;H01L23/66;H01L29/66;G06K19/077;H01L29/786;H01L23/14 主分类号 H01L27/12
代理机构 代理人
主权项 1. A device, comprising: a) an electrically active substrate; b) a dielectric layer thereon, configured to insulate integrated circuitry from said metal-containing substrate; c) a plurality of diodes and a plurality of thin film transistors on said dielectric layer, said diodes having at least one first semiconductor layer in common with said thin film transistors, said at least one first semiconductor layer being formed from a liquid-phase ink comprising silicon; and d) a plurality of capacitors in electrical communication with at least some of said diodes, said plurality of capacitors having at least one metal layer in common with contacts to said diodes and thin film transistors.
地址 Redwood City CA US