发明名称 |
UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME |
摘要 |
Disclosed are an ultraviolet (UV) light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode comprises growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity. |
申请公布号 |
KR20160012785(A) |
申请公布日期 |
2016.02.03 |
申请号 |
KR20140094958 |
申请日期 |
2014.07.25 |
申请人 |
SEOUL VIOSYS CO., LTD. |
发明人 |
PARK, KI YON;HEO, JEONG HUN;KIM, HWA MOK;HAN, GUN WOO |
分类号 |
H01L33/32;H01L33/14 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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