BIDIRECTIONAL SWITCH

摘要

A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate. A vertical peripheral wall of the second conductivity type connects the front surface to the rear surface and surrounds the thyristors. On the front surface, in a ring-shaped region of the substrate separating the vertical peripheral wall from the thyristors, a first region of the first conductivity type is provided having a doping level greater than the substrate and having the shape of a ring-shaped band portion partially surrounding the first thyristor and stopping at the level of the adjacent region between the first and second thyristors.

主权项

1. A bidirectional switch, comprising:
a semiconductor substrate of a first conductivity type having a front surface and a rear surface; first and second adjacent thyristors connected in antiparallel extending vertically between the front surface and the rear surface of the substrate; a vertical peripheral wall of a second conductivity type connecting the front surface of the semiconductor substrate to the rear surface and surrounding said first and second adjacent thyristors; and on the front surface, in a ring-shaped region of the substrate separating the vertical peripheral wall from the first and second adjacent thyristors, a first region of the first conductivity type, having a greater doping level than the semiconductor substrate, the first region having a shape of a portion of a ring-shaped band partially surrounding the first thyristor and stopping at an adjacent region between the first and second adjacent thyristors.