| 摘要 |
According to an embodiment of the present invention, a method for manufacturing a semiconductor device comprises forming patterns with various widths using a double patterning process. The method for manufacturing a semiconductor device includes: sequentially forming a lower layer and an upper layer on a substrate; forming a first sacrificial pattern and a second sacrificial pattern on the upper layer; forming a first spacer in a side wall of the first sacrificial pattern, and a second spacer in a side wall of the second sacrificial pattern; selectively removing the first sacrificial pattern and the second sacrificial pattern; forming a first upper pattern and a second upper pattern by etching the upper layer exposed to the first spacer and the second spacer; exposing an upper surface of the first upper pattern and an upper surface of the second upper pattern by removing the first spacer and the second spacer; forming a third spacer in a side wall of the second upper pattern; and forming a first lower pattern by etching the lower layer exposed to the first upper pattern, and a second lower pattern having a width wider than that of the first lower pattern by etching the lower layer exposed to the second upper pattern and the third spacer. |
