| 摘要 |
993,822. Lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 22, 1963 [Dec. 31, 1962], No. 46114/63. Heading H3B. [Also in Division H1] A semi - conductor crystal suitable for a laser has a portion with planar side faces projecting from one large area face, the area at the level of the face being less than that of the tip of the portion and one side face being parallel with a particular crystallographic plane. Fig. 1 shows a semi-conductor device such as an injection laser comprising a gallium arsenide body 10 with a protruding portion 12 containing PN junction 14. The device ia manufactured by diffusing zinc into an N-type gallium arsenide wafer to form a PN junction, cutting grooves as shown in Fig. 4b, masking with an etch resist which is removed to expose the corner regions which are etched to provide undercut regions 20, 22, as shown in Fig. 4e, and then slicing the wafer down the plane of minimum bond strength by a cleavage member such as blade 48, to expose optically flat, accurately positioned, planar edges to the portions which project from the main body. Fig. 2 shows a structure incorporating a plurality of such elements each being associated with an electrode and its own current source so that each may act as a laser. Light emitted from the PN junction of element 68 is directed precisely to the emission stimulation region of element 66 so that this element may be stimulated either electrically or optically. Other optical paths are possible between the various elements so that multiple input and logical switching operations may be performed. Optical properties may be improved by coatings or immersion in appropriate liquid or solid media. Different materials may be used to provide different optical wavelengths. The invention may be used for other types of junction semiconductor devices and indium phosphide, indium antimonide, germanium and silicon may be used as the semi-conductor. Cleavage of the crystal may be effected by sand blasting or ultrasonic techniques.
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