| 摘要 |
PROBLEM TO BE SOLVED: To prevent resistance abnormality from being caused as pattern destruction occurs to an electrically unstable place of a conductive layer from a contact hole owing to wafer electrification by plasma processing, and to actualize higher pixels with a predetermined chip size.SOLUTION: A plasma dry etching device (RIE type) which has a low plasma density of 1×1,010/cm3 to 1×1,011/cm3 is used to design and form contact holes as one or a plurality of connection holes of a contact plug 36 so as to have a total base area which is 1/855-1/7,500 of a total area of transfer electrodes 32, 33 which are connected to a drive wiring layer 35 and electrically in a floating state at the point of time of contact hole formation. |
