发明名称 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress degradation of characteristics of transistors in a driving circuit.SOLUTION: A driving circuit comprises: a circuit 200; a transistor 101-1; and a transistor 101-2. The transistor 101-1 and the transistor 101-2 are controlled to be on or off by selective input of a signal from the circuit 200 to a gate. The transistor 101-1 and the transistor 101-2 are turned on or off, thereby wiring 112 and wiring 111 becomes a conductive state or a non-conductive state.
申请公布号 JP2016012725(A) 申请公布日期 2016.01.21
申请号 JP20150137375 申请日期 2015.07.09
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KIMURA HAJIME;UMEZAKI ATSUSHI
分类号 H01L29/786;G02F1/133;G02F1/1368;G09F9/30;G09G3/20;G09G3/30;G09G3/36;H01L21/8234;H01L21/8238;H01L27/06;H01L27/08;H01L27/088;H01L27/092 主分类号 H01L29/786
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