| 摘要 |
Disclosed is a method for etching a palladium metal layer for an optoelectronic device. The method for etching a palladium metal layer for an optoelectronic device is characterized by comprising the steps of: (a) preparing a palladium metal layer by depositing palladium on the upper part of a metal oxide semiconductor layer formed on a substrate; (b) forming a PR pattern layer on the palladium metal layer; (c) and dry-etching the palladium metal layer using a gas mixture of inert gas and active gas. The active gas is one from Cl_2 gas, CHF_3 gas and CF_4 gas, or a mixture in which at least two therefrom are mixed. According to the present invention, through plasma dry-etching treatment using a gas mixture of Ar gas and the gas formed by one or a mixture of at least two among Cl_2 gas, CHF_3 gas and CF_4 gas, provided is an optoelectronic device which can not only alleviate a degree of redeposition of etching by-products on an etching wall of the palladium metal layer and plasma damages to the metal oxide semiconductor layer in the lower part of the palladium metal layer, and but also apply accurate patterns onto the palladium metal layer to improve electrical reliability. |
