MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR

摘要

A manufacturing method of a thin film transistor and a thin film transistor are provided. In the manufacturing method, formation of pattern of a source electrode (7), a drain electrode (8) and an active layer (6) comprises: forming a semiconductor layer (10) and a conductive layer (11) that cover the whole substrate on the substrate in sequence; forming a first photoresist layer (4) at a region where the source electrode is to be formed and at a region where the drain electrode is to be formed on the conductive layer (11), respectively; forming a second photoresist layer (5) at least at a gap between the source electrode and the drain electrode that are to be formed on the conductive layer (11); conducting an etching process on the substrate with the first photoresist layer (4), the second photoresist layer (5), the semiconductor layer (10) and the conductive layer (11) formed thereon, so as to form pattern of the active layer (6), the source electrode (7) and the drain electrode (8).

主权项

1. A manufacturing method of a thin film transistor, comprising: forming a gate electrode pattern and a gate insulating layer on a substrate, and forming patterns of a source electrode, a drain electrode and an active layer;
wherein forming patterns of the source electrode, the drain electrode and the active layer comprises: forming a semiconductor layer and a conductive layer that cover the whole substrate on the substrate in sequence; forming a first photoresist layer at a region where the source electrode is to be formed and at a region where the drain electrode is to be formed on the conductive layer, respectively; forming a second photoresist layer at least at a gap between the source electrode and the drain electrode that are to be formed on the conductive layer; and conducting an etching process on the substrate with the first photoresist layer, the second photoresist layer, the semiconductor layer and the conductive layer formed thereon, so as to form patterns of the active layer, the source electrode and the drain electrode.