发明名称 13族窒化物結晶、及び13族窒化物結晶基板
摘要 <p>A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.</p>
申请公布号 JP5842490(B2) 申请公布日期 2016.01.13
申请号 JP20110201216 申请日期 2011.09.14
申请人 株式会社リコー 发明人 林 昌弘;皿山 正二;佐藤 隆;南部 洋志;木村 千春;三好 直哉
分类号 C30B29/38 主分类号 C30B29/38
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