| 摘要 |
<p>A compound semiconductor solar battery according to the present invention includes a substrate; a back electrode disposed on the substrate; a p-type compound semiconductor light absorbing layer disposed on the back electrode; an n-type compound semiconductor buffer layer disposed on the p-type compound semiconductor light absorbing layer; and a transparent electrode disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorbing layer has a cross sectional structure including, in a thickness direction, a portion only of a single particle and a portion of a plurality of piled particles. In the portion of a plurality of piled particles, the particles in contact with the back electrode have a ratio y1 of Ga/(In+Ga), and the particles in contact with the n-type compound semiconductor buffer layer have a ratio y2 of Ga/(In+Ga), where y1>y2.</p> |
