SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A silicon carbide substrate (10) having a gate insulating film (20) provided in contact with a first main surface (10a), having a gate electrode (30) provided in contact with the gate insulating film (20), and having a source region (15) exposed from first main surface (10a) is prepared. A first recess (46) having a first inner wall surface (46a) is formed in an interlayer insulating film (40) by performing a first isotropic etching with respect to the interlayer insulating film (40) with use of a mask layer (45). A second recess (47) having a second inner wall surface (47a) is formed by performing a first anisotropic etching with respect to the interlayer insulating film (40) and the gate insulating film (20) with use of the mask layer (45) and thereby exposing the source region (15) from gate insulating film (20). An interconnection (60) is formed which is arranged in contact with the first inner wall surface (46a) and the second inner wall surface (47a) and electrically connected to a source electrode (50). Accordingly, a silicon carbide semiconductor device capable of improving the reliability of the interconnection and a method for manufacturing the silicon carbide semiconductor device can be provided.