HKMG HIGH VOLTAGE CMOS FOR EMBEDDED NON-VOLATILE MEMORY

摘要

The present disclosure relates to a structure and method for embedding a non-volatile memory (NVM) in a HKMG (high-κ metal gate) integrated circuit which includes a high voltage (HV) HKMG transistor. NVM devices (e.g., flash memory) are operated at high voltages for its read and write operations and hence a HV device is necessary for integrated circuits involving non-volatile embedded memory and HKMG logic circuits. Forming a HV HKMG circuit along with the HKMG periphery circuit reduces the need for additional boundaries between the HV transistor and rest of the periphery circuit. This method further helps reduce divot issue and reduce cell size.

主权项

1. An integrated circuit (IC), comprising:
an embedded memory region comprising an embedded non-volatile memory (NVM) device; and a periphery region comprising a high voltage high-κ metal gate (HV HKMG) transistor disposed over a high voltage (HV) gate insulating layer, and a periphery circuit disposed over a gate oxide layer.