摘要 |
A light emitting diode. The light emitting diode comprises: a substrate (10); a semiconductor light emitting lamination, located on the substrate (10) and comprising a first semiconductor layer (21), an active layer (22) and a second semiconductor layer (23) from bottom to top, wherein the electric property of the first semiconductor layer (21) is different from that of the second semiconductor layer (23); a transparent conducting layer (40), located on the semiconductor light emitting lamination and provided with an opening part (70); a first electrode (60), electrically connected to the first semiconductor layer (21); and a second electrode (50), electrically connected to the second semiconductor layer (23). The opening part (70) is filled with the second electrode (50), a recessed part (54) is provided in the position, in contact with the transparent conducting layer (40), of the second electrode (50), and the second electrode (50) is embedded into the transparent conducting layer (40). Accordingly, when the structure of the light emitting diode is packaged, the capacity of the second electrode for contending against transverse thrust is enhanced, and the condition of stripping in the packaging and routing processes is avoided. |
申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
WANG, JIN;LU, YI-AN;WU, CHUN-YI;TAO, CHING-SHAN;WANG, DUXIANG |